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RN1317(TE85L,F)

Name: RN1317(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 296980
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	RN1317(TE85L,F)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 0.1W USM
Datasheet	RN1317(TE85L,F) Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	10k
Resistor - Emitter Base (R2) (Ohms)	4.7k
Typical Gain (hFE) (Min)	30 @ 10mA, 5V
Max Vce (sat)	300mV @ 250μA, 5mA
Collector Cut-off Current(Max)	500nA
Frequency - Transition	250MHz
Maximum Power Dissipation	100mW
Mounting	SMD (SMT)
Case / Package	USM
Win Source Part Number	098528-RN1317(TE85L,F)
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN1317(TE85L,F) CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage 098528-RN1317(TE85L,F) is a NPN-Pre-Biased transistor with a breakdown voltage of 50V and a maximum current collector of 100mA.

It has a: typical gain of 30 @ 10mA and 5V, and a maximum power dissipation of 100mW.
This transistor is designed for use in: discrete semiconductor products and is packaged in a USM case.
The frequency-transition of this transistor is: 250MHz, and it has a collector cut-off current of 500nA.
The resistor values of this component are: R1 (10k ohms) and R2 (4.7k ohms).
The supply and demand status for this component is: sufficient.

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RN1317(TE85L,F)

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