The Toshiba Semiconductor and Storage 097228-RN1409,LF is an NPN pre-biased transistor designed for use in low-power amplifier and switching applications.

• The transistor has a: maximum collector current of 100mA and a maximum collector-emitter breakdown voltage of 50V.
• The device has a: low collector cut-off current of 500nA and a typical gain (hFE) of 70 @ 10mA and 5V.
• The transistor has a: maximum power dissipation of 200mW and a low saturation voltage of 300mV @ 250μA and 5mA.
• The device is available in an: S-Mini package and is rated for operation over a wide temperature range.