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Same model may have multiple batches, images only for reference.
RN4981FE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4981FE,LF

Part No RN4981FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4981FE,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 109858-RN4981FE,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4981FE,LF CAD Model

Description

It has a packaging of reel - TR with SMD (SMT) mounting style.

  • Frequency of Transition: 250MHz, 200MHz
  • Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-Off Current(Max): 500nA
  • Typical Gain (hFE) (Min): 30 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Supply and Demand Status: balanced

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