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Same model may have multiple batches, images only for reference.
2SA1778-3-TB-E Real Image
Same model may have multiple batches, images only for reference.

2SA1778-3-TB-E

Part No 2SA1778-3-TB-E
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog RF Transistors (BJT)
Description PNP EPITAXIAL PLANAR SILICON  /  RF Transistor PNP 15V 50mA 1.2GHz 250mW Surface Mount 3-CP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Sanyo
Package Bulk
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 1.2GHz
Noise Figure (dB Typ @ f) 2.5dB @ 400MHz
Gain 13dB
Power - Max 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Current - Collector (Ic) (Max) 50mA
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CP
Base Product Number 2SA1778
RoHS Status Not applicable
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2156-2SA1778-3-TB-E,ONSSNY2SA1778-3-TB-E
Standard Package 3,000
Win Source Part Number 1155491-2SA1778-3-TB-E
Ultra Librarian 3D Model Ultra Librarian 2SA1778-3-TB-E CAD Model

Description

The 2SA1778-3-TB-E is a high-quality bipolar transistor manufactured by Sanyo.

  • Category: Discrete Semiconductor Products
  • Packaging: Bulk
  • Standard Package: 3,000
  • Power - Max: 250mW
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Current - Collector (Ic) (Max): 50mA
  • Gain: 13dB
  • Transistor Type: PNP
  • DC Current Gain (hFE) (Min): 60 @ 5mA, 10V
  • Frequency Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 400MHz
  • Package/Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
  • MSL Level: 1 (Unlimited)
  • REACH Status: Vendor undefined
  • HTSUS Code: 8541.21.0075
  • RoHS Compliant: No

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