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Same model may have multiple batches, images only for reference.
RN1106ACT(TPL3) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1106ACT(TPL3)

Part No RN1106ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W CST3
Datasheet
RN1106ACT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 098337-RN1106ACT(TPL3)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1106ACT(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage 098337-RN1106ACT(TPL3) is an NPN transistor with a pre-biased configuration.

  • Type: discrete semiconductor product
  • Popularity: medium
  • Supply and Demand: sufficient
  • Maximum Current Collector: 80mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Applications: amplifiers, oscillators, and switches
  • Status: obsolete

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