Toshiba Semiconductor and Storage's 120039-RN1412TE85LF is a medium popularity electronic component with a balanced supply and demand status.

• It is a: discrete semiconductor product with a S-Mini case/package.
• The maximum current collector is: 100mA and the VCEO maximum collector-emitter breakdown voltage is 50V.
• The maximum power dissipation is: 200mW.
• The transistor polarity is: NPN - Pre-Biased with a typical gain (hFE) (Min) of 120 @ 1mA, 5V.
• The frequency - transition is: 250MHz and the maximum Vce (sat) is 300mV @ 250μA, 5mA.
• The collector cut-off current (Max) is: 100nA (ICBO).
• The resistor - base (R1) (Ohms) is: 22k and the resistor - emitter base (R2) (Ohms) is not specified.