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Same model may have multiple batches, images only for reference.
RN1424 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1424

Part No RN1424
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SMINI
Datasheet
RN1424 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 90 @ 100mA, 1V
Max Vce (sat) 250mV @ 1mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 300MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 183642-RN1424
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1424 CAD Model

Description

The Toshiba Semiconductor and Storage 183642-RN1424 is an SMD transistor used in various electronic circuits. It is a pre-biased NPN transistor with a maximum collector current of 800mA. The supply and demand status is sufficient, making it easily available in the market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
685+ $0.0843 $57.7455
1,670+ $0.0693 $115.7310
2,590+ $0.0670 $173.5300
3,575+ $0.0647 $231.3025
4,550+ $0.0635 $288.9250
6,125+ $0.0566 $346.6750
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Availability: 71,000 pieces
MOQ: 685 pcs
Order Increment : 1 pcs
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