The RN1508 is a silicon PNP epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for low-noise amplification and switching applications. This transistor provides a strong performance for amplifying low-level signals without adding significant noise, making it suitable for sensitive electronic circuits.

Applications

• Low-noise amplifier circuits
• Switching circuits
• Audio amplification
• Portable devices
• Sensor signal amplification

Features

• PNP Silicon Epitaxial Planar Transistor
• Low noise figure
• High current gain (hFE)
• Small package size
• Lead-free plating

Benefits

• Enhanced signal clarity in amplification
• Efficient switching performance
• Compact design due to small package
• Environmentally friendly due to lead-free construction
• Reliable performance in a wide range of low-power applications

Specifications

The RN1508 has the following general specifications:

• Polarity: PNP
• Collector-Emitter Voltage (VCEO): -50V
• Collector Current (IC): -0.15A
• Collector Power Dissipation (PC): 0.2W
• DC Current Gain (hFE): Typically 85 to 300 (depending on IC and VCE)
• Noise Figure (NF): Typically 1 dB (at specific conditions)
• Operating and Storage Temperature Range: -55 to 150 °C
• Package: SOT-23 (or equivalent)

The specific current gain (hFE) and noise figure are typically measured at specific collector current (IC) and collector-emitter voltage (VCE) conditions, as provided in the datasheet. Ensure to consult the datasheet for precise values and operating conditions.