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RN1910FE,LF

Part No RN1910FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 100206-RN1910FE,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1910FE,LF CAD Model

Description

The electronic component with Id 304294 is manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 100206-RN1910FE,LF
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: sufficient
  • Frequency Transition: 250MHz
  • Maximum Current Collector: 100mA
  • Maximum Power Dissipation: 100mW
  • Typical Gain (hFE) (Min): 120 @ 1mA, 5V

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