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Same model may have multiple batches, images only for reference.
RN1971TE85LF Real Image
Same model may have multiple batches, images only for reference.

RN1971TE85LF

Part No RN1971TE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Datasheet
RN1971TE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 114095-RN1971TE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1971TE85LF CAD Model

Description

The Toshiba Semiconductor and Storage 114095-RN1971TE85LF is a surface mount NPN pre-biased dual transistor with a transition frequency of 250MHz.

  • Transition Frequency: 250MHz
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Transistor Polarity: 2 NPN
  • Resistor-Base (R1): 10k ohms
  • Package: US6
  • Packaging: Reel – TR
  • Maximum Power Dissipation: 200mW
  • Typical Gain (hFE) (Min): 120 @ 1mA, 5V
  • Supply and Demand Status: Balanced
  • Popularity: Popular

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