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Same model may have multiple batches, images only for reference.
RN1903,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1903,LF

Part No RN1903,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Datasheet
RN1903,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 100551-RN1903,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1903,LF CAD Model

Description

The Toshiba RN1903,LF is a dual NPN pre-biased transistor designed for use in Discrete Semiconductor Products.

  • Frequency - Transition: 250MHz
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current(Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 70 @ 10mA, 5V
  • Maximum Power Dissipation: 200mW
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: US6
  • Supply and Demand Status: Sufficient

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