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Same model may have multiple batches, images only for reference.
RN2117(T5L,F,T) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2117(T5L,F,T)

Part No RN2117(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W SSM
Datasheet
RN2117(T5L,F,T) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 105035-RN2117(T5L,F,T)
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian RN2117(T5L,F,T) CAD Model

Description

The RN2117(T5L,F,T) is a PNP pre-biased transistor designed for use in various electronic applications.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Maximum Power Dissipation: 100mW
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Frequency Transition: 200MHz
  • Mounting: SMD (SMT)
  • Supply and Demand Status: balanced
  • Package Quantity: 3k pcs

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895+ $0.1294 $115.8130
1,390+ $0.1247 $173.3330
1,905+ $0.1213 $231.0765
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3,300+ $0.1051 $346.8300
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