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RN2130MFV

Part No RN2130MFV
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1243416-RN2130MFV
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2130MFV CAD Model

Description

The RN2130MFV is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for load switching and power management applications where low on-resistance and high-speed switching are required. This MOSFET is suitable for portable devices, DC-DC converters, and other power-sensitive applications.

Applications:

  • Load Switching: Used to control power to various loads in electronic devices.
  • Power Management: Efficiently regulating power in portable devices and other electronic equipment.
  • DC-DC Converters: Used in voltage regulation and power conversion circuits.
  • Battery Management Systems (BMS): Protecting and managing lithium-ion batteries.
  • Portable Devices: Ideal for use in smartphones, tablets, and other battery-powered devices.

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
  • High-Speed Switching: Enables high-frequency operation.
  • Small Surface Mount Package: Allows for compact designs.
  • Lead-Free Finish: Meets environmental standards.
  • Avalanche Rated: Provides robustness against voltage transients.

Benefits:

  • Improved Efficiency: Low on-resistance reduces power dissipation, improving overall system efficiency.
  • Reduced Heat Dissipation: Lower conduction losses result in less heat generation.
  • Compact Design: Small surface mount package allows for smaller and lighter designs.
  • Increased Reliability: Robust design ensures reliable operation in demanding applications.
  • Simplified Circuit Design: Easy to implement in various power management designs.

Additional Details:

The RN2130MFV typically features a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating that varies depending on the package and operating conditions. The gate-source threshold voltage (VGS(th)) is typically between -1V and -3V. This MOSFET typically comes in a small surface-mount package. Proper PCB layout and thermal management techniques are critical for achieving optimal performance and reliability. Always consult the manufacturer's datasheet for specific operating conditions, ratings, and application recommendations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4724 $59.0500
300+ $0.3881 $116.4300
465+ $0.3754 $174.5610
635+ $0.3638 $231.0130
825+ $0.3511 $289.6575
1,100+ $0.3153 $346.8300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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