The RN2401(TE85R,F) is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. It is a variant of the RN2401, intended for switching applications that demand low on-resistance and efficient power management. The (TE85R,F) likely refers to a specific tape and reel packaging option (TE85R) and potentially a specific manufacturing flow or lot code (F).

Applications

• Load switching
• Power management circuits
• DC-DC converters
• Solid-state relays
• Portable devices

Features

• P-Channel MOSFET
• Low on-resistance (RDS(on))
• Low gate threshold voltage (VGS(th))
• High-speed switching
• Small surface-mount package
• TE85R tape and reel packaging for automated assembly

Benefits

• Efficient power switching due to low RDS(on)
• Easy to drive with low gate voltage requirements
• Fast switching speeds minimize power losses
• Compact design for space-constrained applications
• Enhances battery life in portable devices due to low power consumption
• Facilitates automated assembly processes with TE85R packaging

Additional Details

Similar to the standard RN2401, the RN2401(TE85R,F) has a drain-source voltage (VDS) around -20V, a gate-source voltage (VGS) rating around ±12V, and a continuous drain current (ID) matching the application needs. The on-resistance (RDS(on)) will be a crucial specification, usually specified at a low value for efficient power switching. The (TE85R) component refers to the packaging format, optimized for pick-and-place equipment in high-speed manufacturing. The "F" likely designates a specific manufacturing lot or flow characteristic. Consult the official Toshiba datasheet for the RN2401 or related variants for detailed specifications.