The RN2611 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-frequency amplification and switching applications. Its key features include a low collector-emitter saturation voltage and high transition frequency, making it suitable for use in various electronic circuits.

Applications

• High-frequency amplifiers
• Oscillators
• Mixers
• Switching circuits
• RF applications

Features

• NPN Silicon Epitaxial Planar Transistor
• Low collector-emitter saturation voltage
• High transition frequency (fT)
• Small signal amplification
• RoHS Compliant

Benefits

• Enhanced Circuit Performance: The high transition frequency allows for efficient amplification and switching in high-frequency circuits, improving overall performance.
• Reduced Power Consumption: Low collector-emitter saturation voltage minimizes power loss, enhancing energy efficiency.
• Reliable Operation: Toshiba's quality manufacturing ensures a stable and reliable component for long-term operation.
• Compact Design: The small form factor allows for integration into compact electronic devices.
• Versatile Application: Suitable for a wide range of applications from amplification to switching.

Technical Specifications

The RN2611 transistor has a collector-emitter voltage (VCEO) of typically around 20V, collector current (IC) around 100mA, and a power dissipation (PC) around 150mW. Its transition frequency (fT) is in the range of several hundred MHz, making it suitable for RF and high-speed switching applications. The device is typically available in a small surface mount package (SMD) such as SOT-23 or similar. Specific details can be found in the official Toshiba datasheet.