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Same model may have multiple batches, images only for reference.
RN2711(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2711(TE85L,F)

Part No RN2711(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.2W USV
Datasheet
RN2711(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 400 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package USV
Win Source Part Number 106606-RN2711(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2711(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 106606-RN2711(TE85L,F) is a high-performance dual PNP pre-biased emitter-coupled transistor.

  • Maximum Current Collector: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain: 400 @ 1mA and 5V
  • Maximum Power Dissipation: 200mW
  • Package: USV case
  • Mounting Technology: SMD (SMT)
  • Frequency Transition: 200MHz
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Ideal for: Discrete semiconductor products

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