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RN2903,LF(CT

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Part No	RN2903,LF(CT
Manufacturer	Toshiba Semiconductor and Storage
Catalog	RF Transistors (BJT)
Description	TRANS 2PNP PREBIAS 0.2W US6 / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200MHz
Power - Max	200mW
Mounting	SMD (SMT)
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6
Base Product Number	RN2903
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	RN2903(T5L,F,T),RN2903(T5LFT)CT-ND,RN2903,LF(CB,RN2903(T5LFT)TR,RN2903(T5LFT)TR-ND,RN2903LF(CTCT,RN2903(T5LFT)DKR,RN2903LF(CT-ND,RN2903LF(CTDKR,RN2903(T5LFT)CT,RN2903LF(CTTR,RN2903(T5LFT)DKR-ND,RN2903LF(CT
Standard Package	3,000
Win Source Part Number	991602-RN2903,LF(CT
Ultra Librarian 3D Model	Ultra Librarian RN2903,LF(CT CAD Model

Alternative Products

Description

This electronic component is a bipolar transistor array manufactured by Toshiba Semiconductor and Storage.

Maximum Power: 200mW
Maximum Collector-Emitter Breakdown Voltage: 50V
Mounting: SMD (SMT)
Package: 6-TSSOP, SC-88, SOT-363
Frequency Transition: 200MHz
ECCN: EAR99
Base Resistor: 22kOhms
Emitter-Base Resistor: 22kOhms

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