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RN2906FE,LF(CT

Name: RN2906FE,LF(CT
Brand: Toshiba Semiconductor and Storage
SKU: 974587
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	RN2906FE,LF(CT
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Arrays, Pre - Biased
Description	PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200MHz
Power - Max	100mW
Mounting	SMD (SMT)
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6
Base Product Number	RN2906
RoHS Status	RoHS non-compliant
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Other Names	RN2906FELF(CTTR,RN2906FE,LF(CB,RN2906FELF(CTCT,RN2906FELF(CTDKR
Standard Package	4,000
Win Source Part Number	974587-RN2906FE,LF(CT
Ultra Librarian 3D Model	Ultra Librarian RN2906FE,LF(CT CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage RN2906FE,LF(CT is a bipolar transistor array that is pre-biased with a power of 100mW.

Power: 100mW
Voltage: 50V
Current (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce saturation (Max) @ Ib, Ic: 300mV @ 250μA, 5mA
Current of Collector Cutoff: 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency of Transition: 200MHz
Standard Package: 4,000
Mounting: Surface Mountable

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