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RN4902FE(TE85L,F)

Part No RN4902FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number RN4902
Standard Package 4,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 748760-RN4902FE(TE85L,F)
Ultra Librarian 3D Model Ultra Librarian RN4902FE(TE85L,F) CAD Model

Description

The 748760-RN4902FE(TE85L,F) is a pre-biased bipolar transistor array in a SOT-563 package. It consists of one NPN and one PNP transistor.

  • Power Rating: 100mW
  • Voltage Breakdown (Collector-Emitter): 50V
  • Maximum Collector Current: 100mA
  • Vce Saturation: 300mV @ a base current of 250µA and a collector current of 5mA
  • DC Current Gain (hFE): 50 @ a collector current of 10mA and a collector-emitter voltage of 5V
  • Frequency Transition: 200MHz
  • Manufacturer: Toshiba Semiconductor and Storage
  • Status: currently obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,740 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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