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RN4906FE,LF(CB

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Part No	RN4906FE,LF(CB
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Arrays, Pre - Biased
Description	TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet	RN4906FE,LF(CB Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	47k
Typical Gain (hFE) (Min)	80 @ 10mA, 5V
Max Vce (sat)	300mV @ 250μA, 5mA
Collector Cut-off Current(Max)	100nA (ICBO)
Frequency - Transition	200MHz
Maximum Power Dissipation	100mW
Mounting	SMD (SMT)
Case / Package	ES6
Win Source Part Number	1092515-RN4906FE,LF(CB
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN4906FE,LF(CB CAD Model

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Description

The Toshiba RN4906FE,LF(CB) is a dual NPN and PNP pre-biased transistor that operates at a frequency transition of 200MHz.

Resistor Base (R1): 4.7k
Resistor Emitter Base (R2): 47k
Mounting Type: SMD (SMT)
Case/Package: ES6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Maximum Vce (sat): 300mV @ 250μA and 5mA
Collector Cut-Off Current (Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA and 5V
Maximum Power Dissipation: 100mW
Product Category: Discrete Semiconductor Products
Product Status: Active
Popularity: Medium
Supply and Demand Status: Sufficient

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