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Same model may have multiple batches, images only for reference.
RN4906FE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4906FE,LF

Part No RN4906FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4906FE,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 112382-RN4906FE,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4906FE,LF CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a medium popularity in the open market.

  • Product Status: Active
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Case/Package: ES6
  • Maximum Power Dissipation: 100mW
  • Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Frequency of Transition: 200MHz
  • Resistor-Base (R1) (Ohms): 4.7k
  • Resistor-Emitter Base (R2) (Ohms): 47k
  • Supply and Demand Status: Balance
  • Fake Products Chance: 38%

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245+ $0.7184 $176.0080
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575+ $0.6029 $346.6675
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