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SSM3J35CT,L3F

Part No SSM3J35CT,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series π-MOSVI
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4V
Rds On (Max) @ Id, Vgs 8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 12.2 pF @ 3 V
Power Dissipation (Max) 100mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package CST3
Package / Case SC-101, SOT-883
Base Product Number SSM3J35
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1314390-SSM3J35CT,L3F
Ultra Librarian 3D Model Ultra Librarian SSM3J35CT,L3F CAD Model

Description

The SSM3J35CT,L3F is a P-channel MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for various switching and amplification applications. Its low on-resistance and fast switching speed make it suitable for power management and load switching in portable devices and other electronic systems.

Applications

  • Load switches
  • Power management circuits
  • DC-DC converters
  • Portable devices (e.g., smartphones, tablets)
  • Battery-powered applications
  • Analog switches

Features

  • P-channel MOSFET: Designed for low-side switching applications.
  • Low on-resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Fast switching speed: Enables high-frequency operation.
  • Small surface mount package: Compact size for space-constrained applications.
  • Gate-source voltage (VGS): -25V
  • Drain current (ID): -3A
  • Drain-source voltage (VDS): -30V
  • RoHS compliant: Complies with Restriction of Hazardous Substances (RoHS) directive.

Benefits

  • High efficiency: Low on-resistance minimizes power dissipation and improves overall efficiency.
  • Compact size: Small package allows for use in space-constrained applications.
  • Fast switching: Enables high-frequency operation, improving performance in switching applications.
  • Reliable performance: Designed for stable and reliable operation in a variety of conditions.
  • Easy to use: Compatible with standard surface mount assembly processes.
  • Environmentally friendly: RoHS compliant, reducing the environmental impact.

Additional Details

The Toshiba SSM3J35CT,L3F P-channel MOSFET is a high-performance device designed for a wide range of switching and power management applications. Its low on-resistance ensures minimal power loss, resulting in improved efficiency and reduced heat generation. The fast switching speed allows for high-frequency operation, making it suitable for demanding applications such as DC-DC converters and load switches. The small surface mount package enables use in space-constrained environments, such as portable devices and compact electronic systems.

This MOSFET is commonly used in battery-powered devices due to its low power consumption and high efficiency. It provides a reliable and efficient solution for load switching and power management. The SSM3J35CT,L3F is designed for stable and reliable operation, ensuring consistent performance over a wide range of operating conditions. Its RoHS compliance ensures that it meets environmental standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
380+ $0.1332 $50.6160
915+ $0.1093 $100.0095
1,420+ $0.1059 $150.3780
1,955+ $0.1025 $200.3875
2,525+ $0.0991 $250.2275
3,380+ $0.0888 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 380 pcs
Order Increment : 1 pcs
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