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SSM3K318T(T5L,F,T)

Name: SSM3K318T(T5L,F,T)
Brand: Toshiba Semiconductor and Storage
SKU: 341370
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SSM3K318T(T5L,F,T)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	FETs - Single
Description	MOSFET N-CH 60V 2.5A TSM
Datasheet	SSM3K318T(T5L,F,T) Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Rds On (Max) @ Id, Vgs	107 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Gate Charge (Qg) @ Vgs	7nC @ 10V
Input Capacitance (Ciss) @ Vds	235pF @ 30V
Power - Max	700mW
Operating Temperature Range	150°C (TJ)
Mounting Style	SMD/SMT
Package	TO-236-3, SC-59, SOT-23-3
Manufacturer Device Package	TSM
Win Source Part Number	114035-SSM3K318T(T5L,F,T)
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SSM3K318T(T5L,F,T) CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage MOSFET N-Channel, Metal Oxide transistor is a high-performance device designed for use in various applications.

Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id): 2.5A (Ta) @ 25°C
Gate: Logic level gate with a 4.5V drive
Rds On (Max): 107 mOhm @ 2A, 10V
Gate Charge (Qg): 7nC @ 10V
Input Capacitance (Ciss): 235pF @ 30V
Maximum Power: 700mW
Package: TO-236-3, SC-59, SOT-23-3
Manufacturer Device Package: TSM

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
525+	$0.1109	$58.2225
1,270+	$0.0912	$115.8240
1,950+	$0.0889	$173.3550
2,705+	$0.0855	$231.2775
3,475+	$0.0832	$289.1200
4,690+	$0.0739	$346.5910

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,190 pieces

MOQ: 525 pcs

Order Increment : 1 pcs

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