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Same model may have multiple batches, images only for reference.
SSM6N48FU,RF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N48FU,RF

Part No SSM6N48FU,RF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.1A 2-2J1C
Datasheet
SSM6N48FU,RF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA
Maximum Rds On at Id,Vgs 3.2 Ohm @ 10mA, 4V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Input Capacitance 15.1pF @ 3V
Maximum Power Dissipation 300mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 106536-SSM6N48FU,RF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6N48FU,RF CAD Model

Description

Toshiba Semiconductor and Storage manufactures the electronic component with Id 348753.

  • Product Type: dual N-channel FET
  • Feature: logic level gate
  • Maximum Power Dissipation: 300mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 100mA
  • Gate-Source Threshold Voltage: 1.5V @ 100μA
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.1612 $65.2896
18+ $6.6967 $120.5406
27+ $6.4865 $175.1355
37+ $6.2774 $232.2638
48+ $6.0684 $291.2832
64+ $5.4412 $348.2368
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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