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Same model may have multiple batches, images only for reference.
SSM6N62TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N62TU,LF

Part No SSM6N62TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL MOSFET N-CH X 2 VDS / Mosfet Array 2 N-Channel (Dual) 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
Rds On (Max) @ Id, Vgs 85mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 177pF @ 10V
Power - Max 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case 6-SMD, Flat Leads
Supplier Device Package UF6
Base Product Number SSM6N62
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names SSM6N62TULFCT,SSM6N62TULFTR,SSM6N62TULFDKR,SSM6N62TU,LF(B
Standard Package 3,000
Win Source Part Number 1096306-SSM6N62TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6N62TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM6N62TU,LF is an excellent choice for those looking for a high-quality transistor.

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • ECCN: EAR99
  • HTSUS: 8541.21.0095

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