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SSM6N62TU,LF

Part No SSM6N62TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL MOSFET N-CH X 2 VDS / Mosfet Array 2 N-Channel (Dual) 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
Rds On (Max) @ Id, Vgs 85mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 177pF @ 10V
Power - Max 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case 6-SMD, Flat Leads
Supplier Device Package UF6
Base Product Number SSM6N62
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names SSM6N62TULFCT,SSM6N62TULFTR,SSM6N62TULFDKR,SSM6N62TU,LF(B
Standard Package 3,000
Win Source Part Number 1096306-SSM6N62TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6N62TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM6N62TU,LF is an excellent choice for those looking for a high-quality transistor.

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • ECCN: EAR99
  • HTSUS: 8541.21.0095

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