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TC58BYG2S0HBAI4

Part No TC58BYG2S0HBAI4
Manufacturer Toshiba Semiconductor and Storage
Catalog IT infrastructure Memory
Description SLC NAND Flash Parallel 1.8V 4Gbit 512M 8Bit 25ns 63-Pin TFBGA
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Category IT infrastructure Memory
Win Source Part Number 1454845-TC58BYG2S0HBAI4
Manufacturer Toshiba Semiconductor and Storage
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)
Ultra Librarian 3D Model Ultra Librarian TC58BYG2S0HBAI4 CAD Model

Description

The TC58BYG2S0HBAI4 is a SLC NAND Flash memory chip by KIOXIA with a parallel 1.8V interface. This product features a 4 Gbit (512M x 8Bit) storage capacity, catering to high-performance applications that require reliable non-volatile memory storage. SLC (Single-Level Cell) NAND Flash is known for its high speed, endurance, and reliability, storing one bit of data per cell, which makes it an ideal choice for industrial applications and critical systems where data integrity is paramount. The 25ns access time of this chip ensures rapid data retrieval, significantly enhancing the performance of the device it is incorporated into. Packaged in a compact 63-Pin TFBGA (Thin Fine Ball Grid Array), the TC58BYG2S0HBAI4 is designed for space-sensitive and energy-efficient applications. Given its specifications, this KIOXIA flash memory is suitable for use in embedded systems, data storage, and applications that require frequent and fast reading and writing of data, including IoT devices, automotive applications, and more. As part of KIOXIA's commitment to innovation and quality, this SLC NAND Flash memory represents a reliable storage solution that meets the needs of modern, sophisticated electronics.

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