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TC58NVG2S0HBAI4

Part No TC58NVG2S0HBAI4
Manufacturer Toshiba Semiconductor and Storage
Catalog EEPROM
Description IC EEPROM 4GBIT 25NS 63TFBGA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits (ICs)
Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 4Gb (512M x 8)
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Memory Interface Parallel
Operating Supply Voltage 2.7 V ~ 3.6 V
Operating Temperature Range -40°C ~ 85°C (TA)
Mounting SMD
Package 63-VFBGA
Manufacturer Package 63-TFBGA (9x11)
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 712445-TC58NVG2S0HBAI4
Popularity Medium
Supply and Demand Status Balance
Quantity per package 210
Family Name TC58NVG2S0HBAI4
Introduction Date December 31, 2017
ECCN 3A991.b.1.a
Country of Origin Japan
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian TC58NVG2S0HBAI4 CAD Model

Description

The Toshiba Semiconductor and Storage 712445-TC58NVG2S0HBAI4 is a medium popularity electronic component with a balanced supply and demand status.

  • Mounting Style: Surface Mount Device (SMD)
  • Package: 63-VFBGA
  • Reference Date Code: December 31, 2017
  • Memory Type: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Access Time: 25ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Operating Supply Voltage: 2.7V ~ 3.6V
  • Memory Interface: Parallel
  • Write Cycle Time: 25ns
  • ECCN: 3A991.b.1.a
  • Country of Origin: Japan
  • Estimated EOL Date: 2028

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.0076 $57.0228
6+ $17.8046 $106.8276
9+ $17.2031 $154.8279
13+ $16.0000 $208.0000
17+ $15.3985 $261.7745
21+ $14.7970 $310.7370
!
Prices are subject to market and will be confirmed after the order is placed.
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Availability: 10,500 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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