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TDTC114E,LM

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Part No	TDTC114E,LM
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 50V 0.1A SOT23 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250 MHz
Power - Max	320 mW
Mounting	SMD (SMT)
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Product Number	TDTC114
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Other Names	TDTC114ELMCT,TDTC114E,LM(B,TDTC114ELMDKR,TDTC114ELMTR
Standard Package	3,000
Win Source Part Number	1099013-TDTC114E,LM
Ultra Librarian 3D Model	Ultra Librarian TDTC114E,LM CAD Model

Alternative Products

Description

The TDTC114E,LM is a pre-biased NPN bipolar transistor that comes in a TO-236-3, SC-59, SOT-23-3 package.

Package: TO-236-3, SC-59, SOT-23-3
Maximum Power Rating: 320 mW
Maximum Collector Current: 100 mA
Voltage Breakdown (Collector-Emitter): 50 V
DC Current Gain: 30 @ 5 mA and 5 V
Vce Saturation: 300 mV @ Ib, Ic of 500 µA and 10 mA, respectively
Frequency Transition: 250 MHz
Current Collector Cutoff: 500 nA

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