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TJ15P04M3 Real Image TJ15P04M3 Real Image
Same model may have multiple batches, images only for reference.
TJ15P04M3 Real Image TJ15P04M3 Real Image
TJ15P04M3 Real Image TJ15P04M3 Real Image
Same model may have multiple batches, images only for reference.

TJ15P04M3

Part No TJ15P04M3
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 15A DPAK-3
Datasheet
TJ15P04M3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 100μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1100pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 29W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212845-TJ15P04M3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TJ15P04M3 CAD Model

Description

This MOSFET electronic component is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 212845-TJ15P04M3.

  • Power Dissipation (Max): 29W (Tc)
  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 15A (Ta)
  • Maximum Rds On @ Id,Vgs: 36 mOhm @ 7.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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