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Same model may have multiple batches, images only for reference.
TK100A06N1,S4X Real Image
Same model may have multiple batches, images only for reference.

TK100A06N1,S4X

Part No TK100A06N1,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO-220
Datasheet
TK100A06N1,S4X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 10500pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050165-TK100A06N1,S4X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK100A06N1,S4X CAD Model

Description

The TK100A06N1,S4X is an N-channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • Maximum Power Dissipation: 45W (Tc)
  • Case: TO-220SIS
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0233 $60.6990
70+ $1.6601 $116.2070
110+ $1.6082 $176.9020
150+ $1.5564 $233.4600
195+ $1.5045 $293.3775
260+ $1.3488 $350.6880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,700 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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