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TK100A08N1,S4X(S

Part No TK100A08N1,S4X(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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Categories Uncategorized
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 840301-TK100A08N1,S4X(S
Ultra Librarian 3D Model Ultra Librarian TK100A08N1,S4X(S CAD Model

Description

The TK100A08N1,S4X(S is an N-channel power MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power switching applications. Its primary function is to act as a fast electronic switch in various electronic circuits.

Applications

  • DC-DC Converters: Used in voltage regulation circuits to convert one DC voltage level to another with high efficiency.
  • AC-DC Power Supplies: Employed in power supplies to convert AC voltage to a stable DC voltage for electronic devices.
  • Motor Control: Utilized in motor control circuits for efficient switching and control of motor speed and torque.
  • LED Lighting: Used in LED drivers to regulate current flow and ensure consistent brightness.
  • Power Management Systems: Integrated into power management systems to optimize power usage and reduce energy consumption.

Features

  • N-Channel MOSFET: Offers efficient switching capabilities with low on-resistance.
  • Low On-Resistance (RDS(on)): Minimizes power loss during switching, improving overall efficiency.
  • High-Speed Switching: Enables fast switching speeds for efficient operation in high-frequency circuits.
  • Avalanche Energy Rated: Designed to withstand avalanche breakdown, enhancing reliability.
  • Lead-Free Package: Compliant with RoHS standards, ensuring environmental friendliness.

Benefits

  • Improved Efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency in power conversion.
  • Enhanced Reliability: Avalanche energy rating provides robust performance and protection against voltage spikes.
  • Reduced Heat Generation: Lower power loss results in less heat generation, simplifying thermal management.
  • Compact Design: Enables smaller and more compact designs for electronic devices.
  • Environmentally Friendly: Lead-free package contributes to environmental sustainability.

Additional Details

The TK100A08N1,S4X(S) features a drain-source voltage (VDSS) rating and a continuous drain current (ID) rating that makes it suitable for a variety of power applications. The specific values will vary depending on the exact datasheet revision, so it is important to check the most up-to-date documentation from Toshiba. It typically comes in a standard through-hole or surface-mount package depending on the S4X variant. The MOSFET is designed for use in applications requiring high efficiency and reliability. It's crucial to consult the official Toshiba datasheet for detailed specifications, including voltage and current ratings, thermal characteristics, and package dimensions, to ensure proper application and performance. The gate threshold voltage (VGS(th)) is an important parameter for determining the turn-on characteristics of the MOSFET, which will also be found in the datasheet.

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