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Same model may have multiple batches, images only for reference.
TK10A60E,S4X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK10A60E,S4X

Part No TK10A60E,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO220SIS
Datasheet
TK10A60E,S4X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1107395-TK10A60E,S4X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK10A60E,S4X CAD Model

Description

The Toshiba TK10A60E,S4X is an N-channel MOSFET that has a maximum power dissipation of 45W (Tc).

  • Manufacturer: Toshiba Semiconductor and Storage
  • Maximum Power Dissipation: 45W (Tc)
  • Mounting Type: Through Hole
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 10A (Ta) @ 25 degrees Celsius
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1300pF @ 25V
  • Maximum Rds on: 750 mOhm @ 5A, 10V
  • Category: Discrete Semiconductor Products

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22+ $8.1843 $180.0546
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51+ $6.8642 $350.0742
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