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TK110A10PL,S4X

Part No TK110A10PL,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description X35 PB-F POWER MOSFET TRANSISTOR / N-Channel 100 V 36A (Tc) 36W (Tc) Through Hole TO-220SIS
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 50 V
Power Dissipation (Max) 36W (Tc)
Temperature Range - Operating 175°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK110A10
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349428-TK110A10PL,S4X
Ultra Librarian 3D Model Ultra Librarian TK110A10PL,S4X CAD Model

Description

The TK110A10PL,S4X from Toshiba Semiconductor and Storage is an N-channel MOSFET transistor.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Name: TK110A10PL,S4X
  • Type: N-Channel MOSFET Transistor
  • Drain to Source Voltage (Vdss): 100 V
  • Power Dissipation: 36W (Tc)
  • Current Supply: 36A (Tc)
  • Gate Charge (Qg): 33 nC @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 18A, 10V
  • Packaging: Tube
  • Standard Package: 50
  • Technology: MOSFET (Metal Oxide)
  • Package/Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
  • Mounting Type: Through Hole
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095
  • Base Product Number: TK110A10

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