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TK160F10N1L,LQ

Part No TK160F10N1L,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 160A TO220SM  /  N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10100 pF @ 10 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating 175°C
Mounting SMD (SMT)
Supplier Device Package TO-220SM(W)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number TK160F10
MSL Level 3 (168 Hours)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK160F10N1LLQ
Standard Package 1,000
Win Source Part Number 1099419-TK160F10N1L,LQ
Ultra Librarian 3D Model Ultra Librarian TK160F10N1L,LQ CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has the Win Source Part Number 1099419-TK160F10N1L,LQ.

  • Type: Discrete Semiconductor Product with N-Channel MOSFET technology
  • Continuous Drain Current: 160A
  • Rds On: 2.4mOhm @ 80A, 10V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Maximum Power Dissipation: 375W (Tc)
  • Temperature Range: 175°C
  • Input Capacitance: 10100 pF @ 10 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6237 $52.4740
47+ $2.1528 $101.1816
72+ $2.0855 $150.1560
100+ $2.0183 $201.8300
129+ $1.9510 $251.6790
172+ $1.7492 $300.8624
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,310 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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