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Same model may have multiple batches, images only for reference.
TK20A60W5,S5VX Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK20A60W5,S5VX

Part No TK20A60W5,S5VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO-220
Datasheet
TK20A60W5,S5VX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 1800pF @ 300V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 175 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050317-TK20A60W5,S5VX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK20A60W5,S5VX CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET TK20A60W5,S5VX is designed for use in discrete semiconductor products.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 20A (Ta)
  • Gate-Source Threshold Voltage: 4.5V @ 1mA
  • Max Gate Charge: 55nC @ 10V
  • Max Input Capacitance: 1800pF @ 300V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 175 mOhm @ 10A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5208 $53.2280
85+ $1.2478 $106.0630
125+ $1.2088 $151.1000
175+ $1.1698 $204.7150
225+ $1.1309 $254.4525
300+ $1.0139 $304.1700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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