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Same model may have multiple batches, images only for reference.
TK28N65W5,S1F
Same model may have multiple batches, images only for reference.

TK28N65W5,S1F

Part No TK28N65W5,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description X35 PB-F POWER MOSFET TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
Power Dissipation (Max) 230W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Base Product Number TK28N65
Standard Package 30 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 899693-TK28N65W5,S1F
Ultra Librarian 3D Model Ultra Librarian TK28N65W5,S1F CAD Model

Description

The TK28N65W5,S1F is a N-Channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Package: Through-hole
  • Series: TK28N65
  • Vdss: 650 V
  • Id: 27.6A @ 25°C
  • Rds On: 130mOhm @ 13.8A and 10V Vgs
  • Vgs(th): 4.5V @ 1.6mA Id
  • Power Dissipation (Max): 230W @ Tc of 150°C
  • Qg: 90 nC @ 10V Vgs
  • Ciss: 3000 pF @ 300V Vds
  • Maximum Vgs: ±30V
  • Operating Temperature: -40°C to 150°C
  • MSL Level: 1 (Unlimited)
  • HTSUS Code: 8541.29.0095

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