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Same model may have multiple batches, images only for reference.
TK42E12N1,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK42E12N1,S1X

Part No TK42E12N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 120V 88A TO-220
Datasheet
TK42E12N1,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 3100pF @ 60V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 21A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1050535-TK42E12N1,S1X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK42E12N1,S1X CAD Model

Description

The Toshiba Semiconductor and Storage is a high-quality electronic component that is designed to provide reliable performance.

  • Win Source Part Number: 1050535-TK42E12N1,S1X
  • Popularity: Medium
  • Type: MOSFET
  • Polarity: N-Channel
  • Power Dissipation: 140W (Tc)

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160+ $0.7366 $117.8560
245+ $0.7135 $174.8075
335+ $0.6905 $231.3175
435+ $0.6675 $290.3625
580+ $0.5984 $347.0720
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Availability: 5,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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