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TK5A80E,S4X

Part No TK5A80E,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description PB-F POWER MOSFET TRANSISTOR TO-
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1008963-TK5A80E,S4X
Ultra Librarian 3D Model Ultra Librarian TK5A80E,S4X CAD Model

Description

The 1008963-TK5A80E,S4X is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Vdss Drain to Source Voltage: 800 V
  • Id Continuous Drain Current @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A and 10V
  • Power Dissipation: 40W
  • Mounting Type: Through Hole
  • Package: TO-220-3 Full Pack
  • Manufacturer: Toshiba Semiconductor and Storage
  • Package: Tube
  • Standard Package: 50 pieces
  • Input Capacitance (Ciss) @ 25 V: 950 pF
  • Maximum Gate-Source Voltage (Vgs): ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7121 $53.4075
175+ $0.5843 $102.2525
265+ $0.5661 $150.0165
370+ $0.5478 $202.6860
475+ $0.5296 $251.5600
635+ $0.4748 $301.4980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 163 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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