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Same model may have multiple batches, images only for reference.
TK7A50D Real Image
Same model may have multiple batches, images only for reference.

TK7A50D

Part No TK7A50D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 7A TO-220SIS
Datasheet
TK7A50D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.22 Ohm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 056658-TK7A50D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK7A50D CAD Model

Description

The Toshiba Semiconductor and Storage TK7A50D is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Supply and Demand Status: balanced
  • Description: The TK7A50D is designed for use in a wide range of applications, including power supplies, voltage regulators, and battery chargers.
  • Maximum Power Dissipation: 35W (Tc)
  • Continuous Drain Current: 7A (Ta)
  • Description: this MOSFET is ideal for high-performance applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4204 $58.8560
335+ $0.3453 $115.6755
520+ $0.3350 $174.2000
715+ $0.3234 $231.2310
925+ $0.3130 $289.5250
1,235+ $0.2807 $346.6645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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