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Same model may have multiple batches, images only for reference.
TK7P60W,RVQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK7P60W,RVQ

Part No TK7P60W,RVQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R / MOSFET N CH 600V 7A DPAK
Datasheet
TK7P60W,RVQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 350μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 490pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107465-TK7P60W,RVQ
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name TK7P60W
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK7P60W,RVQ CAD Model

Description

The Toshiba Semiconductor and Storage TK7P60W is an N-Channel MOSFET with a super junction feature.

  • Power Dissipation: 60W (Tc)
  • Continuous Drain Current: 7A (Ta)
  • Supply and Demand Status: Balanced
  • Maximum Rds On: 600 mOhm @ 3.5A, 10V
  • Maximum Gate-Source Voltage: ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6664 $59.9760
215+ $0.5463 $117.4545
330+ $0.5301 $174.9330
455+ $0.5128 $233.3240
585+ $0.4955 $289.8675
780+ $0.4447 $346.8660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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