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Same model may have multiple batches, images only for reference.
TK7R7P10PL,RQ Real Image
Same model may have multiple batches, images only for reference.

TK7R7P10PL,RQ

Part No TK7R7P10PL,RQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description X35 PB-F POWER MOSFET TRANSISTOR / N-Channel 100 V 55A (Tc) 93W (Tc) Surface Mount DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.7mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 50 V
Power Dissipation (Max) 93W (Tc)
Temperature Range - Operating 175°C
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Base Product Number TK7R7P10
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349655-TK7R7P10PL,RQ
Ultra Librarian 3D Model Ultra Librarian TK7R7P10PL,RQ CAD Model

Description

The TK7R7P10PL,RQ is an N-channel MOSFET transistor from Toshiba Semiconductor and Storage that comes in a TO-252-3, DPak package.

  • Drain to Source Voltage: 100V
  • Power Dissipation: 93W @ Tc
  • Gate-Source Voltage: ±20V
  • Temperature Range: Up to 175°C
  • Continuous Drain Current: 55A @ 25°C
  • Maximum Rds On: 7.7mOhm @ 27.5A and 10V
  • Gate Charge: 44 nC @ 10V
  • Input Capacitance: 2800 pF @ 50V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3098 $52.3920
95+ $1.0747 $102.0965
145+ $1.0411 $150.9595
200+ $1.0075 $201.5000
260+ $0.9739 $253.2140
345+ $0.8732 $301.2540
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Availability: 13,670 pieces
MOQ: 40 pcs
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