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Same model may have multiple batches, images only for reference.
TLP785F(D4GBT7F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TLP785F(D4GBT7F)

Part No TLP785F(D4GBT7F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Optoisolators - Transistor, Photovoltaic Output
Description Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP
Datasheet
TLP785F(D4GBT7F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Isolators
Family Optoisolators - Transistor, Photovoltaic Output
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
Number of Channels 1
Voltage - Isolation 5000Vrms
Current Transfer Ratio (Min) 50% @ 5mA
Current Transfer Ratio (Max) 600% @ 5mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Rise / Fall Time (Typ) 2μs, 3μs
Input Type DC
Output Type Transistor
Voltage - Output (Max) 80V
Current - Output / Channel 50mA
Voltage - Forward (Vf) (Typ) 1.15V
Current - DC Forward (If) (Max) 60mA
Vce Saturation (Max) 400mV
Operating Temperature Range -55°C ~ 110°C
Mounting Style Through Hole
Package 4-DIP (0.300", 7.62mm)
Manufacturer Device Package 4-DIP
Win Source Part Number 218365-TLP785F(D4GBT7F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TLP785F(D4GBT7F) CAD Model

Description

The Toshiba Semiconductor and Storage TLP785F(D4GBT7F) is an optoisolator transistor with a photovoltaic output.

  • Maximum DC Forward Current: 60mA
  • Forward Voltage: 1.15V
  • Rise Time: 2μs
  • Fall Time: 3μs
  • Maximum Saturation Voltage: 400mV
  • Current Transfer Ratio: 50% @ 5mA
  • Maximum Current Transfer Ratio: 600% @ 5mA
  • Maximum Output Voltage: 80V
  • Isolation Voltage: 5000Vrms
  • Package: 4-DIP
  • Mounting: Through-hole

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