The TPC8058-H is an N-channel power MOSFET produced by Toshiba Semiconductor and Storage, meticulously designed for high-efficiency power management applications. This MOSFET leverages Toshiba's advanced trench process, resulting in low on-resistance and exceptional switching performance, which translates to improved energy efficiency and reduced heat generation. Encased in a surface-mount SOP-8 package, it is ideally suited for compact and space-constrained designs.

Applications

• DC-DC converters for various electronic devices
• Load switching applications where efficient power control is crucial
• Power management circuits in portable devices, such as smartphones and tablets
• Motor control circuits for small-scale motors
• LED driver circuits for lighting solutions

Features

• N-channel enhancement mode MOSFET
• Low drain-source on-resistance (RDS(ON)) to minimize power losses
• High drain current (ID) handling capacity to accommodate diverse load requirements
• Compact surface-mount SOP-8 package for space-saving designs
• Logic level gate drive compatibility for easy integration with microcontrollers
• Low input capacitance to enhance switching performance
• Fast switching speed for efficient operation

Benefits

• Improved Energy Efficiency: The low RDS(ON) reduces power dissipation, resulting in higher efficiency in power conversion applications.
• Enhanced Thermal Performance: Reduced heat generation simplifies thermal management and minimizes the need for large heatsinks.
• Space-Efficient Design: The small SOP-8 package allows for compact and dense circuit layouts.
• Simplified Control: Logic level gate drive allows for direct control from microcontrollers, simplifying circuit design.
• Increased System Reliability: Fast switching reduces switching losses and stress on other components, improving overall system reliability.

Additional Details

The TPC8058-H features a drain-source voltage (VDSS) rating, and a continuous drain current (ID) rating. The typical drain-source on-resistance (RDS(ON)) is specified at a given gate-source voltage (VGS). The gate threshold voltage (VGS(th)) typically falls within a specified range. The device also exhibits a low gate charge (Qg), contributing to its fast switching characteristics. The operating junction temperature range is from -55°C to 150°C. This MOSFET is RoHS compliant, meeting environmental standards. It's designed for applications where efficiency, size, and reliability are paramount.