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Same model may have multiple batches, images only for reference.
TPCA8021-H
Same model may have multiple batches, images only for reference.

TPCA8021-H

Part No TPCA8021-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 27A SOP-8 ADV
Datasheet
TPCA8021-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1395pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 14A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 056819-TPCA8021-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8021-H CAD Model

Description

The Toshiba Semiconductor and Storage TPCA8021-H is a N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 27A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 27A
  • On-Resistance: 9 mOhm @ 14A and 10V
  • Package: 8-SOP Advance (5x5)
  • Power Dissipation (Ta): 1.6W
  • Power Dissipation (Tc): 45W
  • Popularity: Medium

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95+ $1.2416 $117.9520
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260+ $1.1250 $292.5000
345+ $1.0095 $348.2775
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