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TPCP8103-H

Part No TPCP8103-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 4.8A PS-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 800pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 840mW (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 2.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PS-8 (2.9x2.4)
Dimension 8-SMD, Flat Lead
Win Source Part Number 108381-TPCP8103-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCP8103-H CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a P-Channel electronic component with a drain-source breakdown voltage of 40V, continuous drain current of 4.8A (Ta), and a maximum input capacitance of 800pF @ 10V.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 4.8A (Ta)
  • Maximum Input Capacitance: 800pF @ 10V
  • Maximum Rds On: 40 mOhm @ 2.4A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 840mW (Ta)
  • Temperature Range: 150°C (TJ)
  • Package: PS-8 (2.9x2.4)
  • Dimensions: 8-SMD, flat lead
  • Drive Voltage: 4.5V and 10V
  • Type: discrete semiconductor product
  • Mounting: surface mount technology (SMT)
  • Market: open market
  • Supply and Demand: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3234 $58.2120
435+ $0.2657 $115.5795
675+ $0.2576 $173.8800
930+ $0.2495 $232.0350
1,200+ $0.2414 $289.6800
1,605+ $0.2160 $346.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,600 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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