The TPN2010FNH is a power MOSFET manufactured by Toshiba Semiconductor and Storage. This N-channel MOSFET is designed for efficient power management in a variety of applications, including load switching, DC-DC conversion, and motor control. Its low on-resistance and fast switching speed make it a suitable choice for demanding power applications.

Applications

• Load switching
• DC-DC converters
• Motor control
• Power management in portable devices
• LED lighting systems

Features

• Low on-resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
• Fast switching speed: Reduces switching losses, enhancing overall performance.
• Small package size: Enables compact circuit designs.
• Low gate charge: Reduces switching losses.
• AEC-Q101 qualified: Suitable for automotive applications.

Benefits

• Increased power efficiency: Low on-resistance and fast switching speed contribute to reduced power consumption.
• Compact design: Small package size allows for integration into space-constrained applications.
• Enhanced system reliability: AEC-Q101 qualification ensures robustness and reliability in automotive environments.
• Reduced heat generation: Lower on-resistance minimizes heat dissipation.
• Simplified circuit design: Easy to drive, reducing design complexity.

Additional Details

The TPN2010FNH has a drain-source voltage (VDS) rating of 30 V and a continuous drain current (ID) of 7 A. The on-resistance (RDS(on)) is typically 24 mOhms at VGS = 10 V. The gate threshold voltage (VGS(th)) is typically between 1 V and 3 V. The operating temperature range is -55°C to +150°C. It's offered in a TSON Advance package. It is designed for surface mount applications.