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Same model may have multiple batches, images only for reference.
XPH3R206NC,L1XHQ Real Image
Same model may have multiple batches, images only for reference.

XPH3R206NC,L1XHQ

Part No XPH3R206NC,L1XHQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 70A 8SOP / N-Channel 60 V 70A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101, U-MOSVIII-H
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 70A (Ta)
Rds On (Max) @ Id, Vgs 3.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4180 pF @ 10 V
Power Dissipation (Max) 960mW (Ta) , 132W (Tc)
Temperature Range - Operating 175°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-SOIC (0.197", 5.00mm Width)
Base Product Number XPH3R206
Standard Package 5,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1350019-XPH3R206NC,L1XHQ
Ultra Librarian 3D Model Ultra Librarian XPH3R206NC,L1XHQ CAD Model

Description

The XPH3R206NC,L1XHQ is a N-channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Drain to Source Voltage: 60 V
  • Power Dissipation: 960mW (Ta), 132W (Tc)
  • Temperature Range: 175°C
  • Ratings: AEC-Q101 and U-MOSVIII-H rated
  • Maximum Vgs: ±20V
  • Current Continuous Drain: 70A (Ta)
  • Rds On (Max): 3.2mOhm @ 35A, 10V
  • Vgs(th) (Max): 2.5V @ 500µA
  • Gate Charge (Qg) (Max): 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max): 4180 pF @ 10 V

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