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Same model may have multiple batches, images only for reference.
XPH4R10ANB,L1XHQ Real Image
Same model may have multiple batches, images only for reference.

XPH4R10ANB,L1XHQ

Part No XPH4R10ANB,L1XHQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 70A 8SOP / N-Channel 100 V 70A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 70A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4970 pF @ 10 V
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Temperature Range - Operating 175°C
Mounting SMD (SMT)
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-SOIC (0.197", 5.00mm Width)
Base Product Number XPH4R10
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 264-XPH4R10ANBL1XHQCT,XPH4R10ANB,L1XHQ(O,264-XPH4R10ANBL1XHQDKR,264-XPH4R10ANBL1XHQTR
Standard Package 5,000
Win Source Part Number 1183628-XPH4R10ANB,L1XHQ
Ultra Librarian 3D Model Ultra Librarian XPH4R10ANB,L1XHQ CAD Model

Description

The Toshiba U-MOSVIII-H MOSFET is a high-quality N-channel FET that is designed to handle large currents and high voltages.

  • Drain to Source Voltage: 100 V
  • Continuous Drain Current: 70A @ 25°C
  • Rds On: 4.1mOhm @ 35A and 10V
  • Gate Charge: 75 nC @ 10 V
  • Input Capacitance: 4970 pF @ 10 Vds
  • Package: 8-SOIC (0.197", 5.00mm Width)
  • Suitable for: power supplies, motor drives, and lighting systems.

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