The UTT50P04L-TN3-R is a P-Channel enhancement mode power MOSFET from UTC (Unisonic Technologies Co., Ltd). Designed for high-efficiency switching applications, it offers low on-state resistance (RDS(on)) and fast switching speed, making it ideal for DC-DC converters, load switching, and power management in various electronic systems.

Applications:

• DC-DC Converters
• Load Switching
• Power Management Systems
• Battery Protection Circuits
• Motor Control Applications

Features:

• Low On-State Resistance (RDS(on))
• Fast Switching Speed
• High Avalanche Energy
• Simple Drive Requirement
• Lead-Free and RoHS Compliant

Benefits:

• Increased Efficiency: The low RDS(on) minimizes power losses, improving efficiency in power conversion circuits.
• Reduced Switching Losses: Fast switching speed reduces switching losses, further enhancing efficiency and thermal performance.
• Enhanced System Reliability: The high avalanche energy capability ensures robustness and reliability in demanding operating conditions.
• Simplified Circuit Design: The simple drive requirement simplifies circuit design and reduces component count.
• Environmentally Compliant: Lead-free and RoHS compliant, meeting environmental regulations.

Specifications:

The UTT50P04L-TN3-R features a drain-source voltage (VDS) of -40V and a continuous drain current (ID) of -50A. The RDS(on) is typically 14mΩ at VGS = -10V. The gate-source threshold voltage (VGS(th)) is typically around -2.0V. The total gate charge (Qg) is approximately 20nC. The device is available in a TO-252 package for efficient heat dissipation. The operating junction temperature range spans from -55°C to +175°C.