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BFR93AR

Part No BFR93AR
Manufacturer Vishay
Catalog RF Transistors (BJT)
Description Silicon NPN Planar RF Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Win Source Part Number 1153325-BFR93AR
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFR93AR CAD Model

Description

The BFR93AR is a silicon NPN bipolar RF transistor manufactured by Vishay. It is designed for high-frequency applications requiring high gain and low noise. Common uses include RF amplifiers, oscillators, and mixers in communication systems and instrumentation.

Applications:

  • RF Amplifiers
  • Oscillators
  • Mixers
  • Satellite TV Tuners
  • Cordless Telephones

Features:

  • High Transition Frequency (fT)
  • Low Noise Figure
  • High Gain
  • Low Feedback Capacitance
  • Small Plastic Package (SOT23)

Benefits:

  • Excellent performance at high frequencies
  • Improved signal sensitivity
  • Increased signal strength
  • Reduced distortion
  • Easy to use in compact designs

Technical Specifications:

The BFR93AR boasts a high transition frequency (fT) typically around 8 GHz, enabling its use in a wide array of RF applications. It offers a low noise figure, typically 1.3 dB at 1 GHz, ensuring excellent sensitivity in receiver applications. The transistor provides high gain, typically 13 dB at 1 GHz, amplifying signals effectively. Its low feedback capacitance minimizes unwanted oscillations and improves stability. The device is housed in a compact SOT23 plastic package, making it easy to integrate into small, space-constrained designs. The collector-emitter voltage (VCEO) is typically 15V, and the collector current (IC) is rated for up to 50mA. The power dissipation is typically 250 mW. The operating temperature range is -55°C to +150°C. It's designed to provide stable and reliable performance across a wide range of operating conditions. The BFR93AR comes in tape and reel packaging for automated assembly. Its high linearity and low distortion characteristics make it ideal for high-performance RF systems. It features gold metallization for improved reliability and long-term stability. It is commonly used in low-noise amplifiers (LNAs) and local oscillators (LOs) in various communication systems. Additional characteristics include a low base resistance and minimized parasitic inductances. The transistor’s performance is optimized for efficient operation in different amplifier and oscillator configurations. The BFR93AR’s specifications support straightforward implementation in both discrete and integrated RF circuits. Its blend of high performance and compact size makes it a popular choice for RF designers aiming for optimal system performance. It is particularly well-suited for use in wireless communication devices where miniaturization and high-frequency performance are critical.

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